With the continuous development of the semiconductor industry, people's pursuit of integrated circuit speed and capacity continues to increase. It is particularly important to develop a high-performance non-volatile memory. Spin Transfer Torque-Magnetic Random Access Memory（STT-MRAM） has the characteristics of low power consumption, fast reading and writing speed, and compatibility with traditional CMOS technology, and can be used as an ideal substitute for FLASH and SRAM. The STT-MRAM memory cell is composed of magnetic materials, and its device parameters are susceptible to interference from external magnetic fields. Therefore, it is necessary to evaluate the ability of the STT-MRAM memory to resist magnetic field interference. Based on the in-depth investigation of the working mechanism of STT-MRAM memory cell, this paper analysed the degree of interference of STT-MRAM by external magnetic fields under different read and write operations, and develops an anti-magnetic field interference test plan, built an FPGA-based STT-MRAM anti-magnetic field interference ability test platform,carried out the anti-magnetic interference ability test of the STT-MRAM memory, and the test results were consistent with the theoretical analysis of STT-MRAM anti-magnetic interference ability.